New Ultra-Low Power Memory for Neuromorphic Computing

KAIST researchers have created a low-power, cost-efficient phase change memory device, setting a new standard in memory technology.

A team of Korean researchers is making headlines by developing a new memory device that can be used to replace existing memory or used in implementing neuromorphic computing for next-generation artificial intelligence hardware for its low processing costs and ultra-low power consumption.

KAIST (President Kwang-Hyung Lee) announced on April 4th that Professor Shinhyun Choi’s research team in the School of Electrical Engineering has developed a next-generation phase change memory* device featuring ultra-low-power consumption that can replace DRAM and NAND flash memory.